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1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy
1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长

查看参考文献23篇

文摘 The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.
其他语种文摘 报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1~7)×10^10cm^-2范围之内,而面密度处于4×10^10cm^-2时有良好的光致发光谱性能.含有三到五层1.3μm量子点的激光器成功实现了室温连续激射.
来源 半导体学报 ,2006,27(3):482-488 【核心库】
关键词 quantum dot ; InAs ; laser diode
地址

Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083

语种 英文
文献类型 研究性论文
ISSN 0253-4177
学科 电子技术、通信技术
基金 国家自然科学基金 ;  国家863计划 ;  国家973计划
文献收藏号 CSCD:2351005

参考文献 共 23 共2页

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引证文献 3

1 季海铭 p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益特性的研究 物理学报,2009,58(3):1896-1900
被引 2

2 Zhong Qinghu Electron Raman scattering in a cylindrical quantum dot Journal of Semiconductors,2012,33(5):052001-1-052001-5
被引 1

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