1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy
1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长
查看参考文献23篇
文摘
|
The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported. |
其他语种文摘
|
报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1~7)×10^10cm^-2范围之内,而面密度处于4×10^10cm^-2时有良好的光致发光谱性能.含有三到五层1.3μm量子点的激光器成功实现了室温连续激射. |
来源
|
半导体学报
,2006,27(3):482-488 【核心库】
|
关键词
|
quantum dot
;
InAs
;
laser diode
|
地址
|
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083
|
语种
|
英文 |
文献类型
|
研究性论文 |
ISSN
|
0253-4177 |
学科
|
电子技术、通信技术 |
基金
|
国家自然科学基金
;
国家863计划
;
国家973计划
|
文献收藏号
|
CSCD:2351005
|
参考文献 共
23
共2页
|
1.
Qiu Y. High-performance InAs quantum-dot lasers near 1.
Appl Phys Lett,2001,79:3570
|
被引
5
次
|
|
|
|
2.
Wang X D. Passive mode-locking in1.
J Cryst Growth,2001,223:363
|
被引
5
次
|
|
|
|
3.
Niu Z C. Modification of emission wavelength of self-assembled InGaAs/GaAs quantum dots covered by InGaAs layer.
J Cryst Growth,2001,227:1062
|
被引
5
次
|
|
|
|
4.
Gong Z. Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots.
J Phys:Condens Matter,2003,15:5383
|
被引
2
次
|
|
|
|
5.
Fang Z D. Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.
J Phys D:Appl Phys,2004,37:1012
|
被引
2
次
|
|
|
|
6.
Ma B S. Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure.
J Appl Phys,2004,95:933
|
被引
5
次
|
|
|
|
7.
Niu Zhichuan. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes.
Chinese Journal of Semiconductors,2005,26(19):1860
|
被引
3
次
|
|
|
|
8.
Safar G A M. Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots.
Appl Phys Lett,1997,71:521
|
被引
1
次
|
|
|
|
9.
Brusaferri L. Thermally activated carrier transfer and luminescence lineshape in self-organized InAs quantum dots.
Appl Phys Lett,1996,69:3354
|
被引
9
次
|
|
|
|
10.
Mukai K. Self-formed InGaAs quantum dots on GaAs substrates emitting at 1.
Jpn J Appl Phys,1994,33:L1710
|
被引
5
次
|
|
|
|
11.
Ustinov V M. 3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy.
J Cryst Growth,2001,227/228:1155
|
被引
2
次
|
|
|
|
12.
Tatebayashi J. 1.
Appl Phys Lett,2005,86:053107
|
被引
3
次
|
|
|
|
13.
Nuntawong N. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition.
Appl Phys Lett,2005,86:193115
|
被引
4
次
|
|
|
|
14.
Tabebayashi J. InAs/GaAs selfassembled quantum-dot lasers grown by metalorganic chemical vapor deposition-effects of postgrowth annealing on stacked InAs quantum dots.
Appl Phys Lett,2004,85:1024
|
被引
1
次
|
|
|
|
15.
Liu H Y. Influence of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures.
Appl Phys Lett,2004,96:1988
|
被引
1
次
|
|
|
|
16.
Park G. Low-threshold oxide-confined 1.
IEEE Photonics Technol Lett,2000,12:227
|
被引
1
次
|
|
|
|
17.
Mirin R P. 1.
Appl Phys Lett,1995,67:3795
|
被引
5
次
|
|
|
|
18.
Eliseev P G. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes.
Appl Phys Lett,2000,77:262
|
被引
1
次
|
|
|
|
19.
Leonard D. Critical layer thickness for self-assembled InAs islands on GaAs.
Phys Rev B,1994,50:11687
|
被引
19
次
|
|
|
|
20.
Kobayashi N P. In-situ.
Appl Phys Lett,1996,68:3299
|
被引
6
次
|
|
|
|
|