化学气相传输法生长ZnO单晶
Growth of ZnO Single Crystal by Chemical Vapor Transport Method
查看参考文献20篇
|
文摘
|
利用化学气相传输法生长了ZnO单晶．通过控制源区和生长端的温度梯度，使用碳辅助增强质量传尊挚应，在无籽晶自发成核的条件下，得到了晶粒尺寸达5mm×8mm的ZnO晶体．利用长有GaN层的蓝宝石号片待为籽晶，得到了直径32mm、厚4mm左右的ZnO单晶体．用光致发光谱和X射线双晶衍射研究了ZnO晶体的性质并对生长的热力学过程和现象进行了分析． |
|
其他语种文摘
|
A ZnO single crystal is grown by a chemical vapor transport method. The size of the self-nucleated grown ZnO single crystal is 5mm × 8mm through the control of temperature gradient of source and growth zones and the assistance of mass transport enhancement effect of carbon in the growth process, By using a GaN buffered sapphire substrate,a ZnO single crystal of 32mm diameter,4mm thick is obtained. PL spectroscopy and X-ray diffraction technique are used to characterize the properties and the quality of the ZnO single crystal. Thermodynamic phenomena of the single crystal growth process are also discussed. |
|
来源
|
半导体学报
,2006,27(2):336-339 【核心库】
|
|
关键词
|
氧化锌
;
化学气相传输
;
单晶生长
;
ZnO
|
|
地址
|
中国科学院半导体研究所, 北京, 100083
|
|
语种
|
中文 |
|
文献类型
|
研究性论文 |
|
ISSN
|
0253-4177 |
|
学科
|
电子技术、通信技术 |
|
文献收藏号
|
CSCD:2317920
|
参考文献 共
20
共1页
|
|
1.
Look D C. Recent advances in ZnO materials and devices.
Mater Sci Eng. B,2001,80:383
|
被引
175
次
|
|
|
|
|
2.
Look D C. P-type doping and devices based on ZnO.
Phys Status Solidi B,2004,241:624
|
被引
18
次
|
|
|
|
|
3.
Look D C. The future of ZnO light emitters.
Phys Status Solidi A,2004,201:2203
|
被引
34
次
|
|
|
|
|
4.
Coskun C. Radiation hardness of ZnO at low temperatures.
Semicond Sci Technol,2004,19:752
|
被引
8
次
|
|
|
|
|
5.
Pearton S J. Recent progress in processing and properties of ZnO.
Progress in Material Science,2005,50:293
|
被引
115
次
|
|
|
|
|
6.
Look D C. Electrical properties of bulk ZnO.
Solid State Commun,1998,105:399
|
被引
76
次
|
|
|
|
|
7.
Nause J. Pressurized melt growth of ZnO boules.
Semicond Sci Technol,2005,20:S45
|
被引
12
次
|
|
|
|
|
8.
Maeda K. Growth of 2 inch ZnO bulk single crystal by the hydrothermal method.
Semicond Sci Technol,2005,20:S49
|
被引
12
次
|
|
|
|
|
9.
Ohshima E. Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method.
J Cryst Growth,2004,260:166
|
被引
38
次
|
|
|
|
|
10.
Ntep J N. ZnO growth by chemical vapour transport.
J Cryst Growth,1999,207:30
|
被引
2
次
|
|
|
|
|
11.
Mikami M. Growth of zinc oxide by chemical vapor transport.
J Cryst Growth,2005,276:389
|
被引
7
次
|
|
|
|
|
12.
Tena-Zaera R. Study of the ZnO crystal growth by vapour transport methods.
J Cryst Growth,2004,270:711
|
被引
10
次
|
|
|
|
|
13.
Munoz-Sanjosé V. A new approach to the growth of ZnO by vapour transport.
Phys Status Solidi C,2005,2:1106
|
被引
1
次
|
|
|
|
|
14.
Reynolds D C. High quality.
J Appl Phys,2004,95:4802
|
被引
5
次
|
|
|
|
|
15.
Meyer B K. Shallow donors and acceptors in ZnO.
Semicond Sci Technol,2005,20:S62
|
被引
3
次
|
|
|
|
|
16.
Look D C. Electrical and optical properties of defects and impurities in ZnO.
Physica B,2003,340/342:32
|
被引
4
次
|
|
|
|
|
17.
Tomsig E. Band-edge emission in ZnO.
J Lumin,1976,14:403
|
被引
2
次
|
|
|
|
|
18.
Kuhnert R. Vibronic structure of the green photoluminescence due to copper impurities in ZnO.
J Lumin,1981,26:203
|
被引
3
次
|
|
|
|
|
19.
Thonke K. Donor-acceptor pair transitions in ZnO substrate material.
Physica B,2001,308/310:945
|
被引
10
次
|
|
|
|
|
20.
Reynolds D C. Fine structure on the green band in ZnO.
J Appl Phys,2001,89:6189
|
被引
15
次
|
|
|
|
|
了解气象卫星更多信息，请访问