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Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
用于无线PA的高频大功率Si1-xGex／Si HBT的设计和制作
查看参考文献12篇
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文摘
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A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V. |
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其他语种文摘
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采用简单的双台面工艺制作了完全平面结构的2个单元4个发射极指的SiGe HBT．在没有扣除测试结构的影响下，当直流偏置IC=10mA，VCE=2．5V时，fτ和fmax分别为1．8和10．1GHz．增益卢为144．25，BVCBo为9V． |
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来源
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半导体学报
,2006,27(1):9-13 【核心库】
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关键词
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SiGe
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HBT
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power
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RF
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wireless
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地址
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Institute of Semiconductors Chinese Academy of Sciences, State Key Laboratory for Integrated Optoelectronics, Beijing, 100083
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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国家高技术研究发展计划
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国家973计划
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国家自然科学基金
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文献收藏号
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CSCD:2236070
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参考文献 共
12
共1页
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