文摘
|
A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector (DBR) was realized just by selectively wet etching the multiquantum-well (MQW) layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback (DFB) laser was integrated with an electro-absorption modulator (EAM), which was capable of producing 20 dB of optical extinction. |
来源
|
Chinese Optics Letters
,2005,3(8):455-456 【核心库】
|
关键词
|
DBR
;
EAM
;
MQW
|
地址
|
National Research Center for Optoelectronic Technology,Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083
|
语种
|
英文 |
文献类型
|
研究性论文 |
ISSN
|
1671-7694 |
学科
|
物理学 |
基金
|
国家863计划
|
文献收藏号
|
CSCD:2209163
|
|
1.
L. A. Coldren.
IEEE J. Sel. Top. Quantum Electron,2000,6:988
|
被引
10
次
|
|
|
|
2.
C.-K. Chan.
IEEE Photon. Technol. Lett,2001,13:729
|
被引
1
次
|
|
|
|
3.
F. Delorme.
Electron. Lett,1995,31:1244
|
被引
2
次
|
|
|
|
4.
Y. Lu. Tunable Distributed Bragg Reflector Laser Fabricated by Bundle Integrated Guide.
Chin. J. Semiconductor (in Chinese),2003,24:113
|
被引
3
次
|
|
|
|
5.
J. Zhang. An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing.
Chin. J. Semiconductors (in Chinese),2004,25:894
|
被引
4
次
|
|
|
|
6.
P. Bhattacharya.
Semiconductor Optoelectronic Devices,1997:132
|
被引
1
次
|
|
|
|
7.
B. Mason.
IEEE Photon. Technol. Lett.,1999,11:638
|
被引
14
次
|
|
|
|
8.
B. Li.
Chin. Opt. Lett.,2004,2:226
|
被引
1
次
|
|
|
|
9.
M. C. Amann.
Tunable Laser Diodes,1998:86
|
被引
1
次
|
|
|