大功率宽面808nm GaAsP／AlGaAs量子阱激光器分别限制结构设计
Design of SCH Structure for High-Power Broad Area 808nm GaAsP/AlGaAs Quantum-Well Lasers
查看参考文献21篇
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文摘
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本文对有源区条宽100μm的GaAsP／AlGaAs 808nm量子阱激光器分别限制结构进行了理论分析和设计．选取了三种情况的波导层和限制层的铝组分，分别计算和分析了波导层厚度与激光器光限制因子、最大出光功率、垂直发散角和阈值电流密度的函数关系．根据计算结果可知：当波导层和限制层铝组分为0．4和0．5时，采用窄波导结构可以获得器件的最大输出功率为11．2W，发散角为19°，阈值电流密度为266A／cm^2；采用宽波导结构可以得到器件的最大输出功率为9．4W，发散角为32°，阈值电流密度为239A／cm^2． |
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其他语种文摘
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Separate-confinement heterostructures（SCH） of 100μm-wide-stripe GaAsP/AIGaAs quantum-well lasers emitting at a wavelength of 808nm are analyzed and designed theoretically. Choosing three cases of Al-content of the waveguide layer and the cladding layer, we calculate and analyze the dependences of the optical confinement factor, maximal output power, vertical divergence angle, and threshold current density on the thickness of the waveguide layer. Calculated results show that when the Al content of the waveguide and cladding layers are 0.4 and 0.5 respectively, a maximal output power of 11.2W, vertical divergence angle of 19°,and threshold current density of 266A/cm^2 can be achieved by adapting narrow waveguide layers; further,a maximal output power of 9.4W,vertical divergence angle of 32°,and threshold current density of 239A/cm^2 can be obtained by adapting broad waveguide layers. |
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来源
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半导体学报
,2005,26(12):2449-2454 【核心库】
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关键词
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大功率808nm半导体激光器
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GaAsP／AlGaAs量子阱激光器
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分别限制异质结构
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地址
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中科院半导体所, 国家光电子器件工程研究中心, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:2198553
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