Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
厚度对Si衬底上生长的ZnO薄膜性能的影响
查看参考文献19篇
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文摘
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High quality ZnO films are successfully grown on Si（100） substrates by metal-organic chemical vapor deposition at 300℃. The effects of the thickness of the ZnO films on crystal structure, surface morphology,and optical properties are investigated using X-ray diffraction, scanning probe microscopy,and photoluminescence spectra, respectively. It is shown that the ZnO films grown on Si substrates have a highly-preferential C-axis orientation,but it is difficult to obtain the better structural and optical properties of the ZnO films with the increasing of thickness. It is maybe due to that the grain size and the growth model are changed in the growth process. |
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其他语种文摘
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采用金属有机化学气相沉积方法，在Si（100）衬底上生长出具有高度C轴择优取向的ZnO薄膜．通过X射线衍射、原子力显微镜和室温光致发光谱研究了厚度对ZnO薄膜的结构、表面和光学性能的影响．X射线衍射图显示ZnO薄膜只有单一的（0002）峰，具有高度择优取向．AFM和PL测试表明，在取样薄膜厚度范围内，薄膜的表面质量和发光性能没有随着薄膜厚度的增加而提高．这是因为薄膜在厚度增加的生长过程中，生长模型变化且晶粒增大. |
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来源
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半导体学报
,2005,26(11):2069-2073 【核心库】
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关键词
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metal-organic chemical vapor deposition
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X-ray diffraction
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zinc compound
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photoluminescence spectrum
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地址
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Novel Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:2162880
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