蓝宝石衬底上单晶InN外延膜的RF-MBE生长
RF-MBE Growth of an InN Epilayer on Sapphire Substrate
查看参考文献14篇
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文摘
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采用低温氮化铟(InN)缓冲层，利用射频等离子体辅助分子束外延(RF-MBE)方法在蓝宝石衬底上获得了晶体质量较好的单晶InN外延膜．用光学显微镜观察所外延的InN单晶薄膜，表面无铟滴．InN(0002)双晶X射线衍射摇摆曲线的半高宽为14′；用原子力显微镜测得的表面平均粗糙度为3．3nm；Hall测量表明InN外延膜的室温背景电子浓度为3．3×10^18cm^3，相应的电子迁移率为262cm^2／(V·s)． |
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其他语种文摘
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InN films with low-temperature InN buffer layer are successfully grown on sapphire substrates by radio-frequi plasma-excited molecular beam epitaxy. No indium droplets on the surface of the grown InN films. Atomic -force-microscopy flection high-energy electron diffraction,double-crystal X-ray diffraction (DCXRD) ,and Raman spectra are used to clmracti the InN films. The results show that the InN films have good crystallinily, with full width at half maximum of InN (OC DCXRD peak of 14". The room temperature Hall mobility of the films is 62cm^2／(V·s). |
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来源
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半导体学报
,2005,26(6):1169-1172 【核心库】
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关键词
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RF-MBE
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氮化铟
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DCXRD
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AFM
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地址
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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国家973计划
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国家863计划
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国家自然科学基金
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文献收藏号
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CSCD:2091732
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参考文献 共
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