运算放大器不同剂量率的辐射损伤效应
Radiation Effects of Operational Amplifier in Different Dose Rates
查看参考文献8篇
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文摘
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对几种不同类型(TTL,CMOS,JFET-Bi,MOS-Bi)的典型星用运算放大器在不同剂量率(100,10,1及0.01rad(Si)/s)辐照下的响应规律及随时间变化的退火特性进行了研究.结果显示不同类型运放电路的辐照响应有明显差异:双极运放电路辐照剂量率越小,其损伤越大;CMOS运放电路对不同剂量率的响应并非线性关系,但不同剂量率辐照损伤的差异,可以通过与低剂量率相同时间的室温退火得到消除,本质上仍然是与时间相关的效应;JFET输入运放不仅有低剂量率辐照损伤增强效应存在,且辐照后还有明显的"后损伤"现象;PMOS输入运放的结果则表明,各辐照剂量率间的损伤无明显区别. |
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其他语种文摘
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Radiation effects and annealing characteristics are investigated for different types of operational amplifiers at four dose rates ranging from 100 to 0. 01rad(Si)/s for same total doses. The results show that for the bipolar op-amps, the degrada-tion is more pronounced at low dose rate than at high dose rate and dose rate effects also exist for CMOS op-amps, bul different from bipolar op-amps. It represented that the lower the radiation dose rate was appliedi the less the devices were damaged,and the defference induced by high dose rate irradiation can be eliminated by a long time annealing in room temperature. JFET-Bi op-amps have not only enhanced low dose rate sensitivity(ELDRS) effects when irradiated but also further obvious effects of "post-radiation damage" when annealing at room temperture. Moreover,it is also found that there is no difference when the pMOS-Bi op-amps was radiated in different dose rates. |
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来源
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半导体学报
,2005,26(7):1464-1468 【核心库】
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关键词
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运算放大器
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60Coγ辐照
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退火
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剂量率效应
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地址
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中国科学院新疆理化技术研究所, 新疆, 乌鲁木齐, 830011
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:2091230
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参考文献 共
8
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