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文摘
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对径向三重流MOCVD反应器的输运过程进行了二维数值模拟研究.在模拟计算中,分别改变反应腔几何尺寸、导流管位置、流量、压强、温度等条件,得到反应器流场、温场、浓度场的相应变化.根据对模拟结果的分析,发现反应腔内涡旋首先在流动的转折处产生,上下壁面温差的加大使涡旋增大,中管进口流量的增加对涡旋产生抑制作用,内管和外管流量的增加对涡旋产生扩大作用.得出输运过程的优化条件为:反应腔上下壁靠近,导流管水平延长,中管进口流量尽量大于内、外管流量,压强尽量低于105Pa,上下壁面温差尽量减小等. |
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其他语种文摘
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Two-dimensional numerical study on transport phenomena in u radial flow MOCVD reactor with three-.separate verti-cal inlets is conducted. By varying the reactor geometries, inlet flow rales.gas pressure and wall temperature, the corresponding velocity, temperature and concentration fields inside the reactor are calculated. It is found that recirculntion rolls originate from the flow separation near the heml of the inlet tube, while buoyancy forces due to temperature difference enhance the rolls. In-creasing the flow at the mid tube compresses the rolls whereas increasing the flows at the inner and outer tithes enhances the rolls. The optimum conditions of transport process for film growth are: decreasing the distance between the substrate and top wall,lengthening the gas distributor.increasing the flow rale of the raid tube, lowering the total pressure and the temperature difference between the substrate and celling. |
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来源
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半导体学报
,2005,26(5):977-982 【核心库】
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关键词
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MOCVD
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输运过程
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热对流
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数值模拟
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地址
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1.
江苏大学能源与动力工程学院, 江苏, 镇江, 212013
2.
中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金
;
国家高技术研究发展计划
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文献收藏号
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CSCD:2034115
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