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纳米非晶硅(na-Si:H)P-i-n太阳电池
HYDROGENATED NANOMORPH SILICON p- i- n SOLAR CELLS
查看参考文献6篇
文摘
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该文报道了通过适当氢稀释(RH=15)和合适的衬底温度(Ts=170℃)下,用PECVD制备得到的宽带隙氢化纳米非晶硅(na-Si:H)薄膜,并将其用作pin太阳电池的本征层.经过电池结构和工艺条件的优化设计,在p/i,i/n界面插入渐变带隙缓冲层,制备出了glass/ITO/p-a-SiC:H/i-na-Si:H/n-nc-Si:H/Al结构的pin太阳电池.电池初始开路电压(Voc)高达0.94V,同时还能保证0.72的填充因子(FF).光电转换效率(Eff)达到8.35%(AM1.5,100mW/cm2). |
其他语种文摘
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The preparation of hydrogenated nanomorph p-i-n solar cells, has been worked ont by VHF-PECVD under a proper hydrogen dilution (RH = 15) and substrate temperature (Ta = 170T1) a wide nandgap nanomorph silicon (na-Si: H) as the intrinsic layer was used. High initial open circuit voltage( Voc) of 0. 94V fill factor (FF) of 0.72 and energy conversion efficiency (Ef!) of 8. 35% (AMI. 5, 100mW/cm2) have been achieved with confignration of glass/ITO/p-a-SiC^ H/i-na-Si: H/n-nc-Si: H/Al and inserting a band-gap graded buffer layer into both p/i and i/n interfaces. |
来源
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太阳能学报
,2005,26(2):187-191 【核心库】
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关键词
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纳米非晶硅
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pin薄膜太阳电池
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开路电压
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PECVD
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地址
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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0254-0096 |
学科
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能源与动力工程 |
基金
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中国科学院青藏高原综合观测研究站项目
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中国科学院寒区旱区环境与工程研究所知识创新工程项目
;
国家973计划
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文献收藏号
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CSCD:1952736
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参考文献 共
6
共1页
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