Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
硅基1.55μm共振腔增强型探测器
查看参考文献18篇
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文摘
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A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes. |
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其他语种文摘
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报道了一种利用硅乳胶作为键合介质的新型键合技术.高反射率的SiO2/Si反射镜预先用PECVD系统生长在硅片上,然后键合到InGaAs有源区上,键合温度为350℃,无需特殊表面处理,反射镜的反射率可以高达99.9%以上,制作工艺简单,价格便宜.并获得硅基峰值响应波长为1.54μm,量子效率达22.6%的窄带响应,峰值半高宽为27nm.本方法有望用于工业生产. |
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来源
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半导体学报
,2005,26(2):271-275 【核心库】
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关键词
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RCE photodetector
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high quantum efficiency
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direct bonding
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bonding medium
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InGaAs
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地址
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1.
Institute of Semiconductors, Chinese Academy of Sciences, State Key Joint Laboratory of Integrated Optoelectronics, 北京, 100083
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Beijing Chemical Plant, 北京, 100022
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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国家973计划
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国家自然科学基金
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国家高技术研究发展计划
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文献收藏号
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CSCD:1922366
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参考文献 共
18
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