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基于SOI材料的阵列波导光栅的制作
FABRICATION OF ARRAYED WAVEGUIDE GRATING BASED ON SOI MATERIAL

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文摘 采用ICP刻蚀的方法,在SOI材料上制作出了中心波长为1.5509μm、信道间隔为200GHz的5×5阵列波导光栅(AWG).测试中心波长与设计值相差0.28nm,测试波长间隔与设计值相差在0.02nm之内,相邻信道串扰接近10dB,信道插入损耗均匀性为0.7dB,测试结果表明该器件能够初步达到分波功能.
其他语种文摘 An arrayed waveguide grating based on SOI material was fabricated by inductive coupled plasma (ICP) etching technology. The central wavelength of the device was designed at 1.5509|i,m and the channel spacing was 200GHz. Compa-ring with the values of the design, the differences of the central wavelength and the channel spacing in the test were 0. 28nm and 0.02nm, respectively. The adjacent channel crosstalk was about lOdB, and the uniformity of the five channels' inser-tion loss was only 0.7 dB. The results show that the device can be used as a demultiplexer.
来源 红外与毫米波学报 ,2005,24(2):143-146 【核心库】
关键词 复用/解复用器 ; 阵列波导光栅(AWG) ; 信道间隔 ; 中心波长 ; 相邻信道串扰
地址

中国科学院半导体研究所,光电子研发中心, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 1001-9014
学科 电子技术、通信技术
基金 国家自然科学基金资助项目
文献收藏号 CSCD:1911556

参考文献 共 17 共1页

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