吸收对垂直腔面发射激光器光学特性的影响
Effect of Absorption on the Optical Characteristics of VCSELs
查看参考文献12篇
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文摘
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采用光学传输矩阵方法,详细分析了反射镜以及键合界面的吸收对垂直腔面发射激光器光学特性的影响.结果表明,反射镜以及键合界面的吸收对反射镜和垂直腔面发射激光器的反射率和势透射率有较大影响,而对反射镜中心波长处的反射相移以及垂直腔面发射激光器模式的反射相移和模式位置影响很小.随着反射镜以及键合界面的吸收增大,反射镜中心波长处的反射率逐渐减小,垂直腔面发射激光器的模式反射率变化则是先急剧减小,达到一个极小值,然后再逐渐增大,而反射镜中心波长处以及垂直腔面发射激光器模式处的势透射率则都是迅速降低的.此外,将有吸收的键合界面离有源区的距离远一些,有利于提高垂直腔面发射激光器模式处的光输出效率. |
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其他语种文摘
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The effect of absorption in DBR and fused interface on the optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) has been analysed in detail by using optical transfer matrix method. The result shows that the absorption in DBR and fused interface has significant influence on both the reflectivity and the potential transmittivity of the DBR and the VCSEL, but has a weak effect on the phase change on reflection of the DBR at center wavelength and the mode phase change on reflection and mode position of the VCSEL. With the increase of the absorption in DBR and fused interface, the reflectivity of DBR at center wavelength decreases gradually, and the mode reflectivity of VCSEL decreases greatly to a minimum and then increases gradually, and the potential transmittivity of DBR at center wavelength and of VCSEL at mode wavelength reduce greatly respectively. Moreover, it is beneficial to increase the optical output efficiency of VCSELs to put the fused interface a little far away from the active region. |
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来源
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光子学报
,2005,34(1):18-21 【核心库】
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关键词
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垂直腔面发射激光器
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晶片键合
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吸收
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反射率
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反射相移
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势透射率
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地址
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1.
中国科学院半导体研究所, 北京, 100083
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中国科学院电子学研究所, 北京, 10080
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中国科学院半导体研究所, 北京, 100080
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1004-4213 |
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学科
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电子技术、通信技术 |
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基金
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国家863计划
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文献收藏号
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CSCD:1880918
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参考文献 共
12
共1页
|
|
1.
Margalit N M. Top-emitting double-fused 1.
5μm vertical cavity lasers,1998,34(3):285-287
|
被引
1
次
|
|
|
|
|
2.
Black K A. Double-fused 1.
Electronics Letters,1998,34(20):1947-1949
|
被引
2
次
|
|
|
|
|
3.
Karim A. Wafer bonded 1.
Applied Physics letters,2001,78(18):2632-2633
|
被引
3
次
|
|
|
|
|
4.
Margalit N M. Laterally oxidized long wavelength cw vertical-cavity lasers.
Applied Physics Letters,1996,69(4):471-472
|
被引
4
次
|
|
|
|
|
5.
Liau Z L. A novel technique for optoelectronic device fabrication and monolithic integration.
Applied Physics Letters,1990,56(8):737-739
|
被引
12
次
|
|
|
|
|
6.
Tong Q Y. Science and Technology.
Semiconductor Wafer Bonding: Science and Technology,1999:1-48
|
被引
1
次
|
|
|
|
|
7.
Patriarche G. Structure of the GaAs/InP inter face obtained by direct wafer bonding optimised for surface emitting optical devices.
Journal of Applied Physics,1997,82(10):4892-4903
|
被引
2
次
|
|
|
|
|
8.
Sagalowicz L. Defects.
Journal of Applied Physics,2000,87(9):4135-4146
|
被引
6
次
|
|
|
|
|
9.
Piprek J. Simulation and analysis of 1.
Journal of Applied Physics,1997,81(8):3382-3390
|
被引
1
次
|
|
|
|
|
10.
Wilmsen C. Vertical-Cavity Surface-Emitting Lasers.
Vertical-Cavity Surface-Emitting Lasers,1999:293-324
|
被引
1
次
|
|
|
|
|
11.
Macleod H A. Thin-film Optical Filters.
Thin-film Optical Filters,1969:8-25
|
被引
2
次
|
|
|
|
|
12.
林永昌. 光学薄膜原理.
光学薄膜原理,1990:23-49
|
被引
5
次
|
|
|
|
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