Design and Realization of Resonant Tunneling Diodes with New Material Structure
一种新材料结构的RTD器件的设计及实现
查看参考文献12篇
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文摘
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A new material structure with Al0.22Ga(>. 78 As/Ino.i5 Gao.ss As/GaAs emitter spacer layer and GaAs/Ino.15-Gao.8ii As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed. Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs. |
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其他语种文摘
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设计了一种带有Al0.22Ga0.78As/In0.15Ga0.85As/GaAs发射极空间层和GaAs/In0.15Ga0.85As/GaAs量子阱的共振隧穿二极管(RTD)材料结构,并且成功地制作了相应的RTD器件.在室温下,测试了RTD器件的直流特性,计算了RTD器件的峰谷电流比和可资电流密度.在分析器件特性的基础上,指出调整材料结构和优化工艺参数将进一步提高RTD器件的性能. |
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来源
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半导体学报
,2005,26(1):1-5 【核心库】
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关键词
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resonant tunneling diodes
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quantum effect
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DC characterization
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地址
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1.
Microelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, 北京, 100083
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Optoelectronic R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, 北京, 100083
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Novel Material Department, Institute oj Semiconductors, Chinese Academy of Sciences, 北京, 100083
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Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Superlattices and Microstructures,, 北京, 100083
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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国家973计划
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中国科学院项目
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文献收藏号
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CSCD:1870395
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参考文献 共
12
共1页
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