硅基微电子新材料SGOI薄膜研究进展
Progress in the Research and Development of SGOI Virtual Substrate: A New Si-Based Microelectronic Material
查看参考文献19篇
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文摘
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绝缘体上的锗硅技术(SiGeonInsulator,SGOI)和以它为衬底开发的应变硅技术(StrainedSilicononInsulator,sSOI)融合了SiGe技术和SOI技术二者的优点,是近年来人们广泛重视的研究热点和硅基集成电路产业进一步发展的重要研究方向,是国际半导体技术发展路线图(ITRS)中CMOS技术今后几年发展的方向.文章综述了SGOI薄膜的多种制备方法和最新研究进展. |
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其他语种文摘
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SGOI (SiGe on Insulator) and SGOI-based sSOI (Strained Silicon on Insulator) have the advantagesof both SiGe and SOI technologies. In recent years, SGOI, which is listed in the International TechnologyRoadmap for Semiconductors, has attracted more and more attentions and become the focus of research activities inmicroelectronic materials, leading to further development of Si-based IC's. The latest development of SGOI virtualsubstrates and some of its preparation techniques are reviewed in the paper. |
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来源
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微电子学
,2005,35(1):76-80 【扩展库】
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关键词
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绝缘体上硅锗
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薄膜技术
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微电子材料
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SGOI
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地址
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中国科学院半导体研究所材料中心, 北京, 100083
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语种
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中文 |
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文献类型
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综述型 |
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ISSN
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1004-3365 |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金资助项目
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文献收藏号
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CSCD:1866721
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参考文献 共
19
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