双极晶体管的低剂量率电离辐射效应
Low Dose Rate Ionizing Radiation Response of Bipolar Transistors
查看参考文献12篇
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文摘
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通过对 npn 管和 pnp 管进行不同剂量率的电离辐射实验,研究了双极晶体管的低剂量率辐射效应.结果表明,双极晶体管在低剂量率辐照下电流增益下降更为显著,这是由于低剂量率辐照在氧化层中感生了更多的净氧化物正电荷浓度,致使低剂量率下过量基极电流明显增大.而辐照后npn管比pnp管具有更大的有效表面复合面积,致使前者比后者有更大的表面复合电流,从而导致了在各种剂量率辐照下,npn管比pnp管对电离辐射都更为敏感. |
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其他语种文摘
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The effect of low dose rate ionizing radiation is investigated for npn and pnp transistors which are sensitive to the en-hanced low dose rate damage. The results show that the current gain degradation of bipolar transistors is larger at low dose-rate than high dose-rate,and npn transistor is more sensitive than pnp transistor. Possible mechanisms for enhanced damage are discussed. |
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来源
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半导体学报
,2004,25(12):1675-1679 【核心库】
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关键词
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低剂量率
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电离辐射
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双极晶体管
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空间电荷
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地址
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中国科学院新疆理化技术研究所, 乌鲁木齐, 830011
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:1774567
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参考文献 共
12
共1页
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