GaN基肖特基结构紫外探测器
GaN Schottky Barrier Ultraviolet Detector
查看参考文献14篇
|
文摘
|
在蓝宝石(0001)衬底上采用低压金属有机物化学气相沉积(MOCVD)方法生长GaN外延层结构,以此为材料制作了GaN基肖特基结构紫外探测器.测量了该紫外探测器的暗电流曲线、C-V特性曲线、光响应曲线和响应时间曲线.该紫外探测器在5V偏压时暗电流为0.42nA,在10V偏压时暗电流为38.5nA.在零偏压下,该紫外探测器在250nm～365nm的波长范围内有较高的响应度,峰值响应度在363nm波长处达到0.12A/W,在365nm波长左右有陡峭的截止边;当波长超过紫外探测器的截止波长(365nm左右),探测器的响应度减小了三个数量级以上.该紫外探测器的响应时间小于2μs. |
|
其他语种文摘
|
A GaN Schottky barrier ultraviolet detector is fabricated using GaN films grown on sapphire substrates. Its dark current,C-V,responsivity,and response time are measured at room temperature. The dark current of the detector is 0. 42nA under 5V bias,and 38. 5nA under 10V bias. A maximum responsivity of 0. 12A/W is achieved under the illumination with λ= 363nm light and 0V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 365nm,and a high responsivity at the wavelength of 250-365nm. The responsivity of the detector drops by nearly three orders of magnitude across the cutoff wavelength (365nm).Its response time is less than 2μs. |
|
来源
|
半导体学报
,2004,25(6):711-714 【核心库】
|
|
关键词
|
GaN
;
肖特基结构
;
紫外探测器
;
响应度
|
|
地址
|
中国科学院半导体研究所, 集成光电子学国家重点联合实验室, 北京, 100083
|
|
语种
|
中文 |
|
文献类型
|
研究性论文 |
|
ISSN
|
0253-4177 |
|
学科
|
电子技术、通信技术 |
|
基金
|
国家863计划
|
|
文献收藏号
|
CSCD:1693358
|
参考文献 共
14
共1页
|
|
1.
Strite S. GaN.
J Vac Sci Technol B,1992,10(10):1237
|
被引
113
次
|
|
|
|
|
2.
Razeghi M. Semiconductor ultraviolet detectors.
J Appl Phys,1996,79(10):7433
|
被引
114
次
|
|
|
|
|
3.
Khan M A. High-responsivityphotoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers.
Phys Lett,1992,60(23):2917
|
被引
1
次
|
|
|
|
|
4.
Stevens K S. Photoconductive ultraviolet sensor using Mg-doped GaN on Si.
Appl Phys Lett,1995,66(25):3518
|
被引
6
次
|
|
|
|
|
5.
Chen Q. Visible-blind ultraviolet photodetectors based on GaN p-n junctions.
Electron Lett,1995,31(20):1781
|
被引
7
次
|
|
|
|
|
6.
Parish G. High-performance(Al.
Appl Phys Lett,1999,75(2):247
|
被引
20
次
|
|
|
|
|
7.
Monroy E. High-quality visible-blind AlGaN p-i-n photodiodes.
Appl Phys Lett,1999,74(8):1171
|
被引
11
次
|
|
|
|
|
8.
Osinsky A. Low noise p-π-n GaN ultraviolet photodetectors.
Appl Phys Lett,1997,71(16):2334
|
被引
14
次
|
|
|
|
|
9.
Khan M A. Schottky barrierphotodetector based on Mg-doped p-type GaN films.
Appl Phys Lett,1993,63(18):2455
|
被引
10
次
|
|
|
|
|
10.
Osinsky A. Visible-blindGaN Schottky barrier detectors grown on Si.
Appl Phys Lett,1998,72(5):551
|
被引
16
次
|
|
|
|
|
11.
Carrano J C. Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers.
Appl Phys Lett,1997,71(15):1992
|
被引
14
次
|
|
|
|
|
12.
Walker D. High-speed.
Appl Phys Lett,1999,74(5):762
|
被引
16
次
|
|
|
|
|
13.
Yang W. Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise.
Appl Phys Lett,1998,73(8):1086
|
被引
9
次
|
|
|
|
|
14.
Deelman P W. Low-noise GaN Schottky diodes on Si.
Appl Phys Lett,2001,78(15):2172
|
被引
5
次
|
|
|
|
|
了解气象卫星更多信息，请访问