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不同剂量率下偏置对双极晶体管电离辐照效应的影响
Effects of Bias at Different Dose Rates on Ionizing Radiation Response of Bipolar Transistors
查看参考文献10篇
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文摘
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对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验.结果表明,对于不同偏置条件,晶体管在低剂量率辐照下,电流增益都有更为明显的衰降;各种剂量率辐照下,电流增益在发射结反向偏置时比浮空偏置时有更为显著的下降.文章对相关机理进行了探讨。 |
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其他语种文摘
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Ionizing radiation response of bipolar transistors at different dose rates and biases has been investi-gated. It has been shown that the current gain deteriorates significantly at low dose-rate fpr transistors at different bias conditions, and the degradation becomes more significant at emitter reverse bias than at floating bias when ir-radiated at different dose-rates. Possible mechanisms for these effects have also been discussed. |
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来源
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微电子学
,2004,34(6):606-608 【扩展库】
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关键词
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双极晶体管
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偏置
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剂量率
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电离辐照
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地址
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中国科学院,新疆理化技术研究所, 新疆, 乌鲁木齐, 830011
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1004-3365 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:1672750
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参考文献 共
10
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