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文摘
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The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates. |
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来源
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Chinese Journal of Lasers
,2002,11(1):9-13 【核心库】
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关键词
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laser diode
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bar
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waveguide
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Al-free
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地址
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Institute of Semiconductors, The Chinese Academy of Sciences, National Engineering Research Center for Optoelectronics Devices, 北京, 100083
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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1004-2822 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:1364517
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