MULTI-SCALE METHODS FOR INVERSE MODELING IN 1-D MOS CAPACITOR
查看参考文献15篇
文摘
In this paper, we investigate multi-scale methods for the inverse modeling in 1-D Metal-Oxide-Silicon (MOS) capacitor. First, the mathematical model of the device is given and the numerical simulation for the forward problem of the model is implemented using finite element method with adaptive moving mesh. Then numerical analysis of these parameters in the model for the inverse problem is presented. Some matrix analysis tools are applied to explore the parameters' sensitivities. And third, the parameters are extracted using Levenberg-Marquardt optimization method. The essential difficulty arises from the effect of multi-scale physical difference of the parameters. We explore the relationship between the parameters' sensitivities and the sequence for optimization, which can seriously affect the final inverse modeling results. An optimal sequence can efficiently overcome the multi-scale problem of these parameters. Numerical experiments show the efficiency of the proposed methods.
来源
Journal of Computational Mathematics
,2003,21(1):85-100 【核心库】
关键词
Inverse problem
;
MOS capacitor model
;
Finite element method
;
Adaptive moving mesh
;
Levenberg-Marquardt method
;
Sequence for optimization
;
Multi-scale methods
地址
1.
School of Mathematical Sciences, Peking University, 北京, 100871
2.
China Predictive Technology Laboratory,Digital DNA Lab., China, Motorola (China) Electronics Ltd, 北京, 100022
语种
英文
文献类型
研究性论文
ISSN
0254-9409
学科
数学
基金
美国摩托罗拉公司(Motorola)资助
;
国家973计划
文献收藏号
CSCD:1272651
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