文摘
|
传统夹层聚酰亚胺电容式湿度传感器在亚胺化过程中感湿膜会因挥发物产生微孔,对这种传感器的成品率造成很大影响。为此,从元件的结构入手,制作Si—SiO2—PI结构的湿度传感器,对该种传感器的特性进行了测试,并与传统夹层式结构的样品进行了对出.研究表明,Si—SiO2—PI结构的湿度传感器在同等测试条件下,其电容值要出传统结构样品高25%,湿度灵敏度达到1.24pF/%,具有重复性好和一致性高的优点,并且特别利于克服薄膜孔洞和厚度不均匀造成的短路现象,有利于批量生产。 |
其他语种文摘
|
The yield of the traditional sandwich-type sensor is badly influenced by the micro holes in the film caused by the by-products of the imidization reaction. The Capacitive-type humidity sensors with Si-SiO_2-PI structure were prepared and the properties were studied. The properties were compared with those of the traditional sandwich-type sensor. The results showed that the capacitance is increased by 25%; the sensitivity reaches 1.24 pF/%. Short circuit caused by the micro holes in the film has been minimized. The sensor suits for mass production. |
来源
|
电子元件与材料
,2003,22(6):9-10,13 【扩展库】
|
关键词
|
湿度传感器
;
聚酰亚胺
;
电容式
;
二氧化硅绝缘层
|
地址
|
中国科学院新疆理化技术研究所, 新疆, 乌鲁木齐, 830011
|
语种
|
中文 |
文献类型
|
研究性论文 |
ISSN
|
1001-2028 |
学科
|
自动化技术、计算机技术 |
基金
|
国家科技型中小企业技术创新基金
|
文献收藏号
|
CSCD:1180295
|