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一种新型SOI Mach-Zehnder干涉型电光调制器的设计
Design of a Novel Mach-Zehnder Interference Electrooptical Modulator in Silicon-on-insulator
查看参考文献8篇
文摘
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在超紧缩双曲锥形3 dB多模干涉耦合器的基础上,设计了一种新的Silicon-on-insulator (SOI) Mach-Zehnder干涉型电光调制器。与传统的Y分支器相比,双曲锥形3 dB耦合器的制作容差大,而长度缩短了近30%,使得整个器件的尺寸大幅减小。调制区采用横向注入的PIN结构,模拟结果表明:当外加偏压为0.86 V时,器件的调制深度最大,此时注入电流为13.2 mA,对应的器件功耗为11.4 mW。 |
其他语种文摘
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A novel Mach-Zehnder interference electrooptical modulator (MZI) in silicon-on-insulator (SOI) has been designed, based on ultra-compact hyperbolic 1 * 2 3-dB multimode interference (MMI) coupler. Comparing with the conventional Y-branch coupler, the hyperbolic 3-dB MMI coupler exhibits larger fabrication tolerance and shorer length, resulting in a very compact MZI structure. A transversal PIN structure is introduced in the modulation area. The injected free carriers concentration distribution in the silicon guiding layer of the modulation area, as well as the modulation characteristics of the device, is simulated by means of 2-D semiconductor device simulator PISCES-II. The simulation results show that the injected free carriers concentration distribution in the central guiding layer is uniform. The device has the largest modulation depth at an applied forward bias of 0.86 V on the PIN diode, while the injection current is 13.2 mA and the power consumption is 11.4 mW. |
来源
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光子学报
,2003,32(5):555-558 【核心库】
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关键词
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电光调制器
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等离子色散效应
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SOI
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多模干涉耦合器
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Mach-Zehnder干涉
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地址
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中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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1004-4213 |
学科
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电子技术、通信技术 |
基金
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国家自然科学基金
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国家973计划
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文献收藏号
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CSCD:1037741
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共1页
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