半导体纳米结构的可控生长
Controllable Growth of Semiconductor Nanometer Structures
查看参考文献17篇
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文摘
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应用MBE技术和SK生长模式，通过对研究材料体系的应力分布设计，生长动力学研究和生长工艺优化，实现了In(Ga)As/GaAs,InAlAs/AlGaAs/GaAs和InAs/InAl(Ga)As/InP无缺陷量子点（线）的尺寸、形状、密度和分布有序性的可控生长，这对进一步的器件应用特别重要。讨论了半导体纳米结构的空间有序性分布物理起因和退火的机制。 |
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其他语种文摘
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Using MBE (Molecular Beam Epitaxy) technique and SK growth mode, through the stress distribution design of the materials system, controlling the growth dynamics and optimizing growth technologies, the uniformity, the density and the spatial ordering of In (Ga)As/GaAs, InAlAs/AlGaAs/GaAs and InAs/InAl (Ga)As/InP nanostructures can be experimentally controlled. Free defects of quantum dots and quantum wires have been obtained, which are extremely important for device application in future. The physical origins of spatially ordering distribution and annealing mechanism for above mentioned semiconductor nanostructures will be discussed. |
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来源
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人工晶体学报
,2002,31(3):208-217 【核心库】
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关键词
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量子点
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量子线
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半导体纳米结构
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地址
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中国科学院半导体研究所, 中国科学院半导体材料科学重点实验室, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1000-985X |
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学科
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电子技术、通信技术 |
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基金
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国家973计划
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文献收藏号
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CSCD:1016399
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参考文献 共
17
共1页
|
|
1.
Forchel A. Fabrication and Optical Spectroscopy of Ultra-small III-IV Compound Semiconductor Structures Festkorperprobleme.
Advances in Solid State Physics,1988,28:99
|
被引
2
次
|
|
|
|
|
2.
Seifert W. In-situ Growth of Quantum Dot Structures By the Stranski-Krastanow Growth Mode.
Prog. Crystal Growth Charact,1996,33:423-471
|
被引
3
次
|
|
|
|
|
3.
姜卫红.
GaAs基应变自组装In_xGa_(1-x)As量子点的生长、结构和光学性质的研究,2000
|
被引
1
次
|
|
|
|
|
4.
Cirlin G E. Ordering Phenomena in IaAs Strained Layer Morphological Transformation on GaAs(100) Surface.
Appl. Phys. Lett,1995,67:97
|
被引
1
次
|
|
|
|
|
5.
刘会贇.
GaAs基应变自组织In(Al)As量子点材料生长、性质及器件应用,2001
|
被引
1
次
|
|
|
|
|
6.
Xie Y H. Relaxed Temperature for Fabrication Regularly Distributed Quantum Dot Arrays.
Appl. Phys. Lett,1997,71:3567
|
被引
8
次
|
|
|
|
|
7.
Shiryaev S Y. Nanoscale Structring by Misfit Dislocation in Si_(1-x)Ge_x/Ge_x/Si Epitaxial System.
Phys. Rev. Lett,1997,78:503
|
被引
3
次
|
|
|
|
|
8.
Lebens J A. Application of Selectrive Epitaxy to Fabrication of Nanometer Scale Wire and Dot Structures.
Appl. Phys. Lett,1990,56:2642
|
被引
2
次
|
|
|
|
|
9.
Fukui T. GaAs Tetrahedral Quantum Dot Structures Fabrication Using Selective Area Metalorganic Chemical Vapour Deposition.
Appl. Phys. Lett,1991,58:2018
|
被引
4
次
|
|
|
|
|
10.
Fafard S. InAs Self-assembled Quantum Dots on InP by Molecular Beam Epitaxy.
Appl. Phys. Lett,1996,68:991
|
被引
4
次
|
|
|
|
|
11.
Li H X. Ordered InAs Quantum Dots in InAlAs Matrix on (001) InP Structures Grown By Molecular Beam Epitaxy.
Appl. Phys. Lett,1998,72:2123
|
被引
3
次
|
|
|
|
|
12.
Brault J. Role of Buffer Surface Morphology and Alloying Effects on the Properties of InAs Nanostructures Grown on InP(001).
Appl. Phys. Lett,1998,73:2932
|
被引
6
次
|
|
|
|
|
13.
李月法.
InP基半导体低维结构的分子束外延生长和性质的研究,2001
|
被引
1
次
|
|
|
|
|
14.
Glas F. Thermodynamics of a Stressed Alloy with a Free Surface: Coupling Between the Morphological and Compositional Instabilities.
Phys. Rev. B,1997,55:11277
|
被引
1
次
|
|
|
|
|
15.
Yournie E. Structure and Optical Properties of Al_(0.48)In_(0.52)As Layers Grown on InP by Molecular Beam Epitaxy: Influence of the Substrate Temperature and of a Buffer Layer.
J. Appl. Phys,1991,70:7632
|
被引
1
次
|
|
|
|
|
16.
Wang Z G. Self-assembled Quantum Dots, Wires and Quantum-dot Lasers.
J. of Crys. Growth,2001,227/228:1132
|
被引
9
次
|
|
|
|
|
17.
Tersoff J. Competing Relaxation Mechanisms in Strained Layers.
Phys. Rev. Lett,1994,72:3570
|
被引
12
次
|
|
|
|
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