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哑铃形碳化硅晶须生长的机理
Growth mechanism of dumbbell-shaped biomimetic SiC whiskers
查看参考文献7篇
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文摘
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研究了仿生哑铃形碳化硅晶须要生长机理，发现组成仿生晶须的念珠状小球与直杆状碳化硅晶须的生成过程是相对独立的。而且念珠状小球在直杆状晶须上的长生位置是一定的。首先，直杆状面料化硅晶须在反应空间中生成；然后由Si、SiO、SiO_2等组成的非晶态物质在直杆状晶须上的缺陷位置沉积长大。形成包裹在晶须上的念珠状小球，念珠状小球不仅可以在制备碳化硅晶须的过程中生成。而且能够在已有的碳化硅和钛酸钾等晶须上生成。 |
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其他语种文摘
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The growth mechanism of dumbbell-shaped SiC whiskers was proposed according to the results of direct and indirect experiments. The direct experiment was designed to change the reaction time from 10 min to 4 h, and in the indirect experiments the commercial SiC and K_2O·6TiO_2 whiskers were used to investigate whether beads grow on their surface or not. It was found that the growths of the SiC whiskers and beads composing the biomimetic SiC whiskers were independent. First the whisker grew up in the furnace, then the amorphous materials composed of Si, SiO and SiO_2 began to deposit on the stacking faults of the grown whiskers and formed beads encircled the whiskers. Moreover, the beads also can be formed on the commercial SiC and K_2O·6TiO_2 whiskers. |
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来源
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材料研究学报
,2002,16(2):136-140 【核心库】
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关键词
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SiC晶须
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仿生
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生长机理
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地址
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中国科学院金属研究所
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1005-3093 |
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学科
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晶体学 |
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基金
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国家自然科学基金
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文献收藏号
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CSCD:961178
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参考文献 共
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