帮助 关于我们

返回检索结果

柔性阻变存储器材料研究进展
Research progress in flexible resistive random access memory materials

查看参考文献79篇

唐大秀 1,2,3   刘金云 2,3   王玉欣 1,2,3   尚杰 2,3 *   刘钢 2,3   刘宜伟 2,3   张辉 1   陈清明 1   刘翔 1 *   李润伟 2,3 *  
文摘 本文简述了阻变存储器的基本结构、工作原理、发展历程和研究现状,归纳总结了柔性阻变存储器的材料体系,包括介质材料、电极材料和基底材料,以及柔性阻变存储器材料体系的总体趋势和最新研究进展;分析了柔性阻变存储器的性能特点,包括存储性能和力学性能。阐述了发展柔性阻变存储器的重要意义与面临的挑战,提出了该领域现在研究中存在的不足和未来需要进一步研究的方向。得出力学性能稳定的高电导可拉伸电极和存储性能稳定的可拉伸介质是柔性阻变存储器材料今后发展的主要方向。
其他语种文摘 The basic structure,working principle,and the development process and research status of resistive random access memory (RRAM)were outlined.Material systems,including dielectric materials,electrode materials,and substrate materials,as well as broad trends and recent researches of flexible RRAM were summarized;the performance characteristics of flexible RRAM,including storage performance and mechanics performance,were analyzed.The significance and challenge of developing flexible RRAM were explicated.Problems existing in this area and possible approaches to the problems were also put forward.It was concluded that the highly conductive stretchable electrode and the steadily stored stretchable dielectric are primary direction in the future.
来源 材料工程 ,2020,48(7):81-92 【核心库】
DOI 10.11868/j.issn.1001-4381.2018.001298
关键词 柔性阻变存储器 ; 介质材料 ; 电极材料 ; 基底材料 ; 存储性能 ; 力学性能
地址

1. 昆明理工大学材料科学与工程学院, 昆明, 650093  

2. 中国科学院宁波材料技术与工程研究所, 中国科学院磁性材料与器件重点实验室, 宁波, 315201  

3. 中国科学院宁波材料技术与工程研究所, 浙江省磁性材料及其应用技术重点实验室, 宁波, 315201

语种 中文
文献类型 综述型
ISSN 1001-4381
学科 一般工业技术
基金 国家自然科学基金资助项目 ;  国家重点研发计划项目 ;  浙江省公益性技术应用研究计划项目 ;  宁波市“科技创新2025”重大专项
文献收藏号 CSCD:6760243

参考文献 共 79 共4页

1.  张颖. 新型阻变存储器的物理研究与产业化前景. 物理,2017,46(10):645-657 CSCD被引 5    
2.  Akihito S. Resistive switching in transition metal oxides. Materials Today,2008,11(6):28-36 CSCD被引 86    
3.  Simmons J G. New conduction and reversible memory phenomena in thin insulating films. Proceedings the Royal of Society A,1967,301(1464):77-102 CSCD被引 13    
4.  Kim S. Resistive switching characteristics of sol-gel zinc oxide films for flexible memory applications. IEEE Transactions on Electron Devices,2009,56(4):696-699 CSCD被引 5    
5.  Jeong H Y. A low-temperaturegrown TiO_2-based device for the flexible stacked RRAM application. Nanotechnology,2010,21(11):115203-115208 CSCD被引 4    
6.  Kim S. Flexible memristive memory array on plastic substrates. Nano Letters,2011,11(12):5438-5442 CSCD被引 12    
7.  Kim S. Highly durable and flexible memory based on resistance switching. Solid State Electronics,2010,54(4):392-396 CSCD被引 1    
8.  Jeong H Y. Graphene oxide thin films for flexible nonvolatile memory applications. Nano Letters,2010,10(11):4381-4386 CSCD被引 25    
9.  Wang Z Q. Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance. IEEE Electron Device Letters,2011,32(10):1442-1444 CSCD被引 3    
10.  Hu Y J. Interface-engineered amorphous TiO_2-based resistive memory devices. Advanced Functional Materials,2010,20(22):3912-3917 CSCD被引 8    
11.  Cheng C. Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance. Advanced Materials,2011,23(7):902-905 CSCD被引 1    
12.  Jang J. Resistance switching characteristics of solid electrolyte chalcogenide Ag2Se nanoparticles for flexible nonvolatile memory applications. Advanced Materials,2012,24(26):3573-3576 CSCD被引 10    
13.  Ju Y C. Resistance random access memory based on a thin film of cds nanocrystals prepared viacolloidal synthesis. Small,2012,8(18):2849-2855 CSCD被引 1    
14.  Huang R. Resistive switching in organic memory device based on parylene-c with highly compatible process for high-density and low-cost memory applications. IEEE Transactions on Electron Devices,2012,59(12):3578-3582 CSCD被引 2    
15.  Hwang S K. Flexible multilevel resistive memory with controlled charge trap B-and N-doped carbon nanotubes. Nano Letters,2012,12(5):2217-2221 CSCD被引 7    
16.  Lee B H. Direct observation of a carbon filament in water-resistant organic memory. ACS Nano,2015,9(7):7306-7313 CSCD被引 5    
17.  Jang B C. Flexible nonvolatile polymer memory array on plastic substrate viainitiated chemical vapor deposition. ACS Applied Materials &Interfaces,2016,8(20):12951-12958 CSCD被引 9    
18.  Pan L. Metal-organic framework nanofilm for mechanically flexible information storage applications. Advanced Functional Materials,2015,25(18):2677-2685 CSCD被引 7    
19.  Zou S. Resistive switching characteristics in printed CuCuO(AgO)Ag memristors. Electronics Letters,2013,49(13):829-830 CSCD被引 1    
20.  Yoo H G. Flexible one diode-one resistor resistive switching memory arrays on plastic substrates. RSC Advances,2014,4(38):20017-20023 CSCD被引 4    
引证文献 1

1 李子昊 基于CeO_(2-x)-TiO_2薄膜厚度的数模阻变转换机理 材料工程,2023,51(2):141-151
CSCD被引 0 次

显示所有1篇文献

论文科学数据集
PlumX Metrics
相关文献

 作者相关
 关键词相关
 参考文献相关

版权所有 ©2008 中国科学院文献情报中心 制作维护:中国科学院文献情报中心
地址:北京中关村北四环西路33号 邮政编码:100190 联系电话:(010)82627496 E-mail:cscd@mail.las.ac.cn 京ICP备05002861号-4 | 京公网安备11010802043238号