立方碳化硅薄膜的层错结构特征
Structural feature of the stacking faults in cubic SiC films
查看参考文献12篇
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文摘
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本文利用微波等离子体增强化学气相沉积(MPCVD)和脉冲激光沉积(PLD)等薄膜制备技术分别在硅(Si) {001}基片上生长了立方碳化硅(3C-SiC)薄膜。两种方法制备的3C-SiC薄膜均与Si基片具有相同的外延关系3C-SiC〈110〉{001}//Si〈110〉{001},但PLD法制备的3C-SiC薄膜具有较低的层错密度并与Si基片间形成了平直的界面。基于高角环形暗场像(HAADF)原子结构表征的结果,探讨了3C-SiC薄膜中内禀层错、外禀层错、微孪晶和亚稳A-A'型层错的形成机制及它们之间的结构演化关系。 |
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其他语种文摘
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The cubic SiC (3C-SiC) thin films have been epitaxially grown on the Si { 001} substrates by the microwave plasma chemical vapor deposition (MPCVD) and pulsed laser deposition (PLD),respectively. The as-prepared 3C-SiC thin films and the Si substrates have an epitaxial orientation relationship of 3C-SiC〈110〉{ 001}//Si〈110〉{ 001} . The 3C-SiC thin film prepared by PLD has a lower density of stacking faults and the 3C-SiC/Si interface is flat. Based on the high angle annular dark field (HAADF) images, the formation mechanisms and structural evolution of the intrinsic and extrinsic stacking faults,micro-twins,and metastable A-A'type stacking faults in the 3C-SiC thin films have been discussed. |
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来源
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电子显微学报
,2019,38(5):459-463 【扩展库】
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DOI
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10.3969/j.issn.1000-6281.2019.05.005
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关键词
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碳化硅
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层错
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原子结构
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球差校正透射电子显微术
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地址
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中国科学院金属研究所, 沈阳材料科学国家研究中心, 辽宁, 沈阳, 110016
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1000-6281 |
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学科
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晶体学;金属学与金属工艺;化学工业 |
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基金
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国家千人计划青年项目
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中国科学院前沿科学重点研究项目
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国家自然科学基金
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辽宁省“兴辽英才计划”项目
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文献收藏号
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CSCD:6586824
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参考文献 共
12
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