Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping
查看参考文献33篇
文摘
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Doping- and alloying-induced point defects lead to mass and strain field fluctuations which can be used as effective strategies to decrease the lattice thermal conductivity and consequently boost the performance of thermoelectric materials. Herein, we report the effects of Sm and S co-doping on thermoelectric transport properties of copper antimony selenides in the temperature range of 300 K < T < 650 K. Through the Callaway model,it demonstrates that Sm and S co-doping induces strong mass differences and strain field fluctuations in Cu_3SbSe_4. The results prove that doping with suitable elements can increase point defect scattering of heat-carrying phonons, leading to a lower thermal conductivity and a better thermoelectric performance. The highest figure of merit (ZT) of ~0.55 at 648 K is obtained for the Sm and S co-doped sample with nominal composition of Cu_(2.995)Sm_(0.005)Sb-Se_(3.95)S_(0.05),which is about 55% increase compared to the ZT of pristine Cu_3SbSe_4. |
来源
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Rare Metals
,2018,37(4):290-299 【核心库】
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DOI
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10.1007/s12598-018-1038-6
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关键词
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Thermoelectric
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Point defect scattering
;
Cu_3SbSe_4
;
Lattice thermal conductivity
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地址
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1.
Institute for Materials Science, University of Stuttgart, Germany, Stuttgart, 70569
2.
Institute of Solid State Physics, Chinese Academy of Sciences, Key Laboratory of Materials Physics, Chinese Academy of Sciences, Hefei, 230031
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语种
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英文 |
文献类型
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研究性论文 |
ISSN
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1001-0521 |
学科
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冶金工业 |
基金
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the German Research Foundation within the DFG Priority Program SPP 1386
;
Federal Ministry for Economics Affairs and Energy (BMWI)
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文献收藏号
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CSCD:6218434
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