薄膜应力测量方法及影响因素研究进展
Research Progress on Measurement Methods and Influence Factors of Thin-film Stress
查看参考文献44篇
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文摘
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随着薄膜电子器件的尺寸不断减小,薄膜应力成为薄膜器件失效的重要原因。薄膜应力不仅影响薄膜结构而且与薄膜光学、电学、力学等性质相关,因此,薄膜应力逐渐成为薄膜材料研究领域的热点之一。本文综述了薄膜应力的最新研究进展,对比分析了基底曲率法、X射线衍射法、拉曼光谱法等常见的薄膜应力检测方法,概括了薄膜成分比例、基底类型、磁控溅射工艺参数(溅射功率、工作压力、基底温度)和退火等影响薄膜应力的因素。发现基底曲率法适合测量绝大部分薄膜材料,而X射线衍射法、拉曼光谱法只适合测量具有特征峰的材料,纳米压痕法需与无应力样品作对比实验。在薄膜制备和退火过程中,薄膜应力一般发生压应力和张应力的转化,且多个工艺参数共同影响薄膜应力,适当调节参数可使薄膜应力达到最小值甚至无应力状态。最后,结合薄膜应力当前的研究现状提出了未来可能的研究方向,即寻找不同材料体系薄膜应力的精确测量方法以及薄膜应力检测过程中面临的检测范围问题。 |
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其他语种文摘
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With the size of thin-film electronic devices decreasing,the film stress became an important reason for the failure of thin film devices. Film stress not only affected the membrane structure,but also associated with film optics,electricity,mechanics and other properties,therefore film stress turned into one hot spot in the research field of thin-film materials. This paper reviewed the latest research progress of film stress,substrate curvature method,X-ray diffraction technique and Raman spectroscopy,several frequently used stress measuring techniques were compared and analyzed,and composition ratios of thin film,substrate types,magnetron sputtering process parameters (sputtering power,work pressure,substrate temperature) and annealing etc. factors influencing thin film stress were summarized. It was found that substrate curvature method was suitable for measuring almost all kinds of thin film materials. X-ray diffraction and Raman spectroscopy were just fit for measuring materials with characteristic peaks. Nanoindentation method required extra stress-free samples as comparison experiments. During film fabrication and annealing process,film stress usually transited from compressive to tensile status,and several factors combined together could affect stress,so film stress could be reached the minimum value or even stress-free status through setting appropriate parameters. Finally,combined with film stress research status,accurate stress measurement methods for different materials as a thin-film stress research direction were introduced,and challenges in thin film detection range were pointed out. |
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来源
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航空材料学报
,2018,38(1):17-25 【核心库】
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DOI
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10.11868/j.issn.1005-5053.2017.000126
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关键词
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薄膜应力
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应力测量
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应力控制
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基底曲率法
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地址
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中国航发北京航空材料研究院透明件研究所, 北京, 100095
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北京市先进运载系统结构透明件工程技术研究中心, 北京市先进运载系统结构透明件工程技术研究中心, 北京, 100095
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语种
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中文 |
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文献类型
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综述型 |
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ISSN
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1005-5053 |
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学科
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力学 |
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文献收藏号
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CSCD:6177713
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参考文献 共
44
共3页
|
|
1.
彭志坚. 氮化硅陶瓷刀具表面涂覆高硬耐磨氮化钛涂层研究.
稀有金属材料与工程,2014,33(5):507-511
|
CSCD被引
1
次
|
|
|
|
|
2.
陈牧. 全固态薄膜锂电池研究进展和产业化展望.
航空材料学报,2014,34(6):1-20
|
CSCD被引
9
次
|
|
|
|
|
3.
刘国柱. 柔性显示的研究进展.
材料导报,2008,22(6):111-114
|
CSCD被引
3
次
|
|
|
|
|
4.
Lai C F. High-efficiency robust freestanding composited phosphor films with 2D and 3D nanostructures for high-power remote white LEDs.
ACS Appl Mater Interfaces,2017,9:4851-4859
|
CSCD被引
3
次
|
|
|
|
|
5.
Kirill B. Spatially uniform thin-film formation of polymeric organic semiconductors on lyophobic gate insulator surfaces by self-assisted flow-coating.
ACS Appl Mater Interfaces,2017,9:6237-6245
|
CSCD被引
1
次
|
|
|
|
|
6.
Byun H R. Multifunctional hybrid multilayer gate dielectrics with tunable surface energy for ultralow-power organic and amorphous oxide thin-film transistors.
ACS Appl Mater Interfaces,2017,9:7347-7354
|
CSCD被引
2
次
|
|
|
|
|
7.
Wang X Y. Effects of yttrium on mechanical properties and chemical stability of passive film of aluminide coating on 1045 steel.
Surface and Coatings Technology,2002,160:20-28
|
CSCD被引
2
次
|
|
|
|
|
8.
Chason E. Tutorial: understanding residual stress in polycrystalline thin films through real-time measurements and physical models.
Journal of Applied Physics,2016,119(191101):1-20
|
CSCD被引
4
次
|
|
|
|
|
9.
Mizushima I. Residual stress in Ni-W electrodeposits.
Electrochem. Acta,2006,51(27):6128-6134
|
CSCD被引
3
次
|
|
|
|
|
10.
Moon M W. An experimental study of the influence of imperfections on the buckling of compressed thin films.
Acta Mater,2002,50(5):1219-1227
|
CSCD被引
6
次
|
|
|
|
|
11.
Wang J S. Effects of strain cycling on buckling,cracking and spilling of a thermally grown alumina on a nickel-based bond coat.
Acta Mater,1999,47(2):699-710
|
CSCD被引
8
次
|
|
|
|
|
12.
Zhemg Y. Film stress of micro-shutter arrays for the James Webb Space Telescope.
SPIE. 4935,2002:279-286
|
CSCD被引
1
次
|
|
|
|
|
13.
Narayanachari K V L V. Growth stress induced tunability of dielectric permittivity in thin films.
Journal of Applied Physics,2016,119:014106
|
CSCD被引
1
次
|
|
|
|
|
14.
Liu J. Effects of film thickness and microstructures on residual stress.
Surface Engineering,2016,32(3):177-180
|
CSCD被引
1
次
|
|
|
|
|
15.
Flinn P A. Measurement and interpretation of stress in aluminum based metallization as a function of thermal history.
IEEE Trans EIectron Dev,1987,34:689-699
|
CSCD被引
13
次
|
|
|
|
|
16.
安兵. 用基片曲率法测量薄膜应力.
材料保护,2003,36(7):13-15
|
CSCD被引
5
次
|
|
|
|
|
17.
Xie J. Friction,nanostructure,and residual stress of single-layer and multi-layer amorphous carbon films deposited by radio-frequency sputtering.
J Mater Res,2016,31(13):1857-1864
|
CSCD被引
3
次
|
|
|
|
|
18.
张定铨.
材料中残余应力的X射线衍射分析和作用,1999:10,102
|
CSCD被引
1
次
|
|
|
|
|
19.
Sanjurjo J A. Dependence on volume of the phonon frequencies and the infrared effective charges of several III-Ⅴsemiconductors.
Phys Rev B,Condens Matter,1983,28(8):4579-4584
|
CSCD被引
10
次
|
|
|
|
|
20.
Rossini N S. Methods of measuring residual stresses in components.
Mater Des,2012,35(5):72-88
|
CSCD被引
57
次
|
|
|
|
|
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