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Negative magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic chiral anomaly and extrinsic effects

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文摘 Chiral anomaly-induced negative magnetoresistance (NMR) has been widely used as critical transport evidence for the existence of Weyl fermions in topological semimetals. In this mini-review, we discuss the general observation of NMR phenomena in non-centrosymmetric NbP and NbAs. We show that NMR can arise from the intrinsic chiral anomaly of Weyl fermions and/or extrinsic effects,such as the superimposition of Hall signals; field-dependent inhomogeneous current flow in the bulk, i.e., current jetting; and weak localization (WL) of coexistent trivial carriers. The WL-controlled NMR is heavily dependent on sample quality and is characterized by a pronounced crossover from positive to negative MR growth at elevated temperatures, resulting from the competition between the phase coherence time and the spin-orbital scattering constant of the bulk trivial pockets. Thus,the correlation between the NMR and the chiral anomaly need to be scrutinized without the support of complimentary techniques. Because of the lifting of spin degeneracy, the spin orientations of Weyl fermions are either parallel or antiparallel to the momentum, which is a unique physical property known as helicity. The conservation of helicity provides strong protection for the transport of Weyl fermions, which can only be effectively scattered by magnetic impurities. Chemical doping with magnetic and non-magnetic impurities is thus more convincing than the NMR method for detecting the existence of Weyl fermions.
来源 Frontiers of Physics ,2017,12(3):127205-1-127205-10 【核心库】
DOI 10.1007/s11467-016-0636-8
关键词 Weyl semimetals ; chiral anomaly ; negative magnetoresistance ; extrinsic effects
地址

1. Department of Physics,Zhejiang University, Hangzhou, 310027  

2. Department of Physics,Zhejiang University, State Key Lab of Silicon Materials, Hangzhou, 310027  

3. Institute of High Energy Physics,Chinese Academy of Sciences, Beijing, 100049  

4. Zhejiang University, State Key Lab of Silicon Materials, Hangzhou, 310027  

5. Department of Physics,Zhejiang University, Collaborative Innovation Centre of Advanced Micro structures, Hangzhou, 310027  

6. Department of Physics,Zhejiang University, State Key Lab of Silicon Materials;;Collaborative Innovation Centre of Advanced Micro structures, Hangzhou, 310027

语种 英文
文献类型 研究性论文
ISSN 2095-0462
学科 物理学
基金 国家973计划 ;  国家自然科学基金 ;  MOE of China ;  the Fundamental Research Funds for the Central Universities of China ;  the National Key R&D Pro gram of the MOST of China
文献收藏号 CSCD:6025596

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引证文献 4 篇

1 张智强 外尔半金属及其输运特性 物理学进展,2018,38(3):101-131
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2 Li Shuai Dynamic conductivity modified by impurity resonant states in doping three-dimensional Dirac semimetals Frontiers of Physics,2018,13(2):137303-1-137303-9
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