基于聚合物-量子点共混的量子点发光二极管
Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer
查看参考文献15篇
文摘
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在ITO玻璃上制备了ITO/ poly(3, 4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PASS)/ poly (N,N-bis(4-butylphenyl)-N,N-bis(phenyl)benzidine(poly-TPD)/ QD/1,3,5-Tri(1-phenyl-~1H-benzo[d]imidazol-2-yl) phenyl(TPBi)/ LiF/ Al结构的量子点发光二极管(QD-LED)。通过优化量子点的浓度,发现浓度为30 mg/ mL时的器件性能最优,最大外量子效率(EQE)为0.83%,最大发光亮度为4 076 cd/ m~2。为了进一步提高QD-LED的发光效率,将QD掺入聚合物poly(N-vinylcarbazole) (PVK)和1,3-Bis(5-(4-(tert-butyl)phenyl)-1,3,4-oxadiazol-2-yl)ben- zene (OXD-7)中,以使得注入的电子和空穴更加平衡,同时还有助于能量传递,降低QD团聚及修饰QD薄膜表面,减少激子猝灭效应等。为此,通过旋涂和蒸镀两步法制备ITO/ PEDOT:PASS/ poly-TPD/ (PVK:OXD-7):QD/ TPBi/ LiF/ Al结构的器件,改变(PVK:OXD-7):QD比例(1:1,1:3,1:5,0:1),发现(PVK:OXD-7):QD为1:3时的QD-LED具有最优性能,最大EQE为1.97%,相当于非掺杂器件的2.3倍,并且发光峰没有发生偏移。 |
其他语种文摘
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Quantum dot light-emitting diodes (QDLED) with structure ITO/ poly (3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PASS) / poly(N,N-bis(4-butylphenyl)-N,N- bis(phenyl) benzidine(poly-TPD) / QD/1,3,5-Tri(1-phenyl-~1H-benzo[d] imidazol-2-yl) phenyl (TPBi) / LiF/ Al were fabricated. By optimizing the concentration of quantum dots, maximum exter- nal quantum efficiency (EQE) of 0.83% and maximum emission luminance of 4 076 cd/ m~2 were achieved at a QD concentration of 30 mg/ mL. In order to further improve the efficiency of QDLED, QDs were doped into polymer poly(N-vinylcarbazole) (PVK) and 1,3-Bis(5-(4-(tert-butyl)phen- yl)-1,3,4-oxadiazol-2-yl)benzene (OXD-7) so as to balance the injection of electrons and holes, reduce the aggregation of QDs and improve the surface of the films. Devices with structure ITO/ PE- DOT:PASS/ poly-TPD/ (PVK:OXD-7):QD/ TPBi/ LiF/ Al were fabricated by spin coating and ther- mal evaporation. By optimizing the doping concentration of QDs, the maximum EQE of 1.97% is obtained, which is 2.3-fold higher than that of the undoped devices. |
来源
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发光学报
,2016,37(3):299-304 【核心库】
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DOI
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10.3788/fgxb20163703.0299
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关键词
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量子点发光二极管
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聚合物PVK
;
掺杂
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地址
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1.
五邑大学应用物理与材料学院, 广东, 江门, 529020
2.
南方科技大学电子与电气工程系, 广东, 深圳, 518055
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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1000-7032 |
学科
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物理学;电子技术、通信技术 |
基金
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国家自然科学基金
;
广东省特支计划科技创新青年拔尖人才基金
;
深圳市科创委基础研究基金
;
广东省省部产学研合作专项资金项目计划
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文献收藏号
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CSCD:5645061
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