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Dielectric and Electrical Transport Properties of the Fe~(3+)-doped CaCu_3Ti_4O_(12)

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Yang Zhi 1   Zhang Yue 2   You Guang 1   Zhang Kun 1   Xiong Rui 3   Shi Jing 1 *  
文摘 CaCu_(3-x)Fe_xTi_4O_(12) (x=0, 0.015, 0.03, 0.045, 0.06) ceramics were synthesized by sol-gel method. The electrical conduction and dielectric measurements show that the doping of a very small amount of Fe~(3+) ions greatly reduces the low-frequency dielectric constants and leakage, and enhances grain resistivity. For the doped samples, the appearance of the strong low-frequency peaks in the spectra of dielectric loss confirms that the doping of Fe~(3+) ions induces the contact-electrode effect on ceramic surface. These great changes of electrical properties may originate from the reduced amount of oxygen vacancies by doping Fe~(3+).
来源 Journal of Materials Science & Technology ,2012,28(12):1145-1150 【核心库】
DOI 10.1016/s1005-0302(12)60184-4
关键词 Ceramics ; dc electric current ; Dielectric properties ; Doping
地址

1. School of Physics and Technology, Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan, 430072  

2. Institution of Sensors and Intelligent System and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074  

3. School of Physics and Technology, Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education;;Key Laboratory for the Green Preparation and Application of Functional Materials of Ministry of Education, Wuhan, 430072

语种 英文
ISSN 1005-0302
学科 化学工业
基金 Huazhong University of Science and Technology, China ;  国家自然科学基金
文献收藏号 CSCD:4727797

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引证文献 2

1 Hoque Md Monwar Dielectric Relaxation and Conductivity of Ba(Mg_(1/3)Ta_(2/3))O_3 and Ba(Zn_(1/3)Ta_(2/3))O_3 Journal of Materials Science & Technology,2014,30(4):311-320
CSCD被引 0 次

2 Yang Zhi Effect of Sintering on Grain Boundary Microstructure and Electrical Properties of CaCu_3Ti_4O_(12) Ceramics Wuhan University Journal of Natural Sciences,2015,20(3):255-261
CSCD被引 0 次

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