新型红外晶体硫锗镓银的多晶合成
Polycrystal Synthesis of New Infrared Nonlinear Optical Crystal AgGaGeS4

吴海信王振友倪友保耿磊毛明生黄飞

文摘	本文直接使用高纯Ag，Ga，Ge，S单质作为原料合成AgGaGeS_4多晶。为防止S蒸气高压使多晶合成管炸裂，采用双温区气相输运的合成方法。对合成的多晶作粉末衍射（XRD）分析，衍射图谱与标准JC—PDF卡片上峰值位置一致，表明样品为高纯单相AgGaGeS_4多晶。使用该多晶原料成功生长出了优质单晶，并对合成工艺中存在的关键问题进行了讨论。
其他语种文摘	High purity Ag, Ga, Ge, S simple substance were used directly to synthesize AgGaGeS_4 polycrystals. To avoid explosion of the synthetic chamber due to the high pressure of the sulfur vapor, polycrystalline AgGaGeS_4 was synthesized by two-temperature-zone vapor transportation. XRD method was used to characterize the synthetic materials. The diffraction spectrum of the polycrystalline materials is perfectly the same as the standard JC-PDF card according to the reflective peak. The results indicate that the polycrystalline materials are high-quality AgGaGeS_4 polycrystals with single phase. Single crystal was synthesized successfully by using the AgGaGeS_4 polycrystals. Some critical problems of the synthetic process were also discussed.
来源	人工晶体学报 ,2008,37(6):1370-1373 【核心库】
关键词	AgGaGeS4 ; 多晶合成 ; 二温区 ; 气相输运
地址	中国科学院安徽光学精密机械研究所, 安徽, 合肥, 230031
语种	中文
文献类型	研究性论文
ISSN	1000-985X
学科	晶体学
文献收藏号	CSCD:3450596