帮助 关于我们

返回检索结果

电弧离子镀梯度(Ti,Al)N薄膜的结构与抗氧化性能
STRUCTURE AND OXIDATION BEHAVIOR OF GRADIENT (Ti, Al)N FILM PREPARED BY ARC ION PLATING

查看参考文献16篇

冯长杰 1   辛丽 1   李明升 2   朱圣龙 1   王福会 1  
文摘 采用电弧离子镀(AIP)技术在航空发动机压气机用1Cr11Ni2W2MoV不锈钢上沉积(Ti,Al)N梯度薄膜,并研究其微观结构和高温抗氧化性能。结果表明,薄膜均匀致密,与基体结合良好;薄膜为B1型(NaCl)单相结构,具有(220)择优取向;薄膜是内层富TiN、外层富(Ti,Al)N的梯度薄膜;梯度薄膜在700℃和800oC氧化后,表层形成富Al2O3的保护膜,在700℃较长时间内和800℃短时间内对不锈钢基体具有良好的保护作用。
其他语种文摘 Gradient (Ti,Al)N film was deposited on 1Crl 1Ni2W2MoV stainless steel for aero-engine compressor blades by arc ion plating. The microstructure of the film and the high temperature oxidation behavior of the coated steel were studied results showed that the gradient film had a B1 (NaCl) structure with (220) preferred orientation, and with inner layer rich in TiN and outer layer rich in (Ti ,Al)N. The film was very dense and adhensiwe.The oxidation results indicated that the gradient films were protective at 700 ℃ for long time and at 800 ℃ for short time. It was found that protective layers rich in amorphous alumina formed on top of the gradient (Ti,Al)N film during the elevated temperature oxidation which protected the film from further oxidation
来源 中国腐蚀与防护学报 ,2008,28(1):1-6 【核心库】
关键词 电弧离子镀 ; 梯度(Ti ; Al)N薄膜 ; 结构 ; 氧化
地址

1. 中国科学院金属研究所, 腐蚀与防护国家重点实验室, 辽宁, 沈阳, 110016  

2. 江西科技师范学院, 江西, 南昌, 330013

语种 中文
文献类型 研究性论文
ISSN 1005-4537
学科 金属学与金属工艺
基金 国家863计划
文献收藏号 CSCD:3247669

参考文献 共 16 共1页

1.  Ollendorf H. A comparative study of the mechanical properties of TiN coatings using the non-destructive surface acoustic wave method, scratch test and four-point bending test. Surf. Coat. Technal,1996(84):458-464 CSCD被引 3    
2.  Wolf-Dieter Münz. Titanium alumimum nitride films:a new alternative to TiN coatings. J. Vac. Sci. Technol.,1998,A4(6):2717-2725 CSCD被引 1    
3.  Tsutomu Ikeda. Phase formation and characterization of hard coatings in the Ti-Al-N system prepared by the cathodic are ion plating method. Thin Solid Films,1991,195:99-110 CSCD被引 8    
4.  Woo J H. High-temperature oxidation of Ti0. 3Al0. 2N0. 5 thin films deposited on a steel substrate by ion plating. Oxid. Met.,2000,53:529-537 CSCD被引 3    
5.  Kale A N. Tribological properties of(Ti, Al)N coatings deposited at different bias voltages using the cathodic arc technique. Surf. Coat. Technol,2001,145:60-70 CSCD被引 8    
6.  Ding Fwu Lii. The effects of aluminium composition on mechanical properties of reactivity sputtered TiAlN films. Journal of Materials Science,1998,33:2137-2145 CSCD被引 1    
7.  Kwang-Lung Lin. The performance and degradation behaviours of the TiAlN/interlayer coatings on drills. Surf. Coat. Technol.,1997,89:279-284 CSCD被引 1    
8.  Wang D Y. Improvement of the interfacial integrity of(Ti, Al)N hard coatings deposited on high speed steel cutting tools. Surf. Coat. Technol.,1999,120/121:388-394 CSCD被引 9    
9.  谢中维. 离子束辅助沉积(Ti,Al)N 梯度薄膜的结合强度. 真空,1998(2):23-27 CSCD被引 3    
10.  Ding-Fwu Li. The effects of TiAl interlayer on PVD TiAlN films. Surf. Coat. Technol,1998,99:197-202 CSCD被引 2    
11.  Cremer R. A composition spread approach to the optimization of(Ti, Al)N hard coatings deposited by DC and bipolar pulsed magnetron sputtering. Surf. Coat. Technol.,2001,142/144:642-648 CSCD被引 3    
12.  任正义. 1Cr11Ni2W2MoV不锈钢热浸镀Al氧化动力学研究. 广东有色金属学报,2005,2:160-163 CSCD被引 1    
13.  Woo J H. High temperature oxidation of Ti0. 3Al0. 2N0. 5 films deposited on a steel substrate by iron plating. Oxid. Met.,2000,53(5/6):529-537 CSCD被引 3    
14.  Andersen K N. Deposition, mierostructure and mechanical and tribologieal properties of magnetron sputtered TiN/TiAlN multilayers. Surf. Coat. Technol.,2000,123:219-226 CSCD被引 10    
15.  Zoestbergen E. Stress state of TiN/TiAlN PVD muhiplayers. Surf. Eng,2001,17(1):29-34 CSCD被引 3    
16.  Hiroshi Ichimura. High-temperature oxidation of ion-plated TiN and TiAlN films. J. Mater. Res.,1993,8(5):1093-1100 CSCD被引 11    
引证文献 4

1 程玉贤 多弧离子镀Cr_2O_3涂层对γ-TiAl抗氧化性能的影响 腐蚀科学与防护技术,2009,21(3):266-268
CSCD被引 1

2 陈一胜 热处理对TiAlCeN涂层结构和性能的影响 热加工工艺,2010,39(20):187-189,195
CSCD被引 0 次

显示所有4篇文献

论文科学数据集
PlumX Metrics
相关文献

 作者相关
 关键词相关
 参考文献相关

版权所有 ©2008 中国科学院文献情报中心 制作维护:中国科学院文献情报中心
地址:北京中关村北四环西路33号 邮政编码:100190 联系电话:(010)82627496 E-mail:cscd@mail.las.ac.cn 京ICP备05002861号-4 | 京公网安备11010802043238号