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4 篇文献引用了这篇文献
Wang Xiaoliang,
半导体学报, 2006, 27(9), 1521-1525 被引 4 次
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1
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Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz
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Wang Quan;
Chen Changxi;
Li Wei
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Journal of Semiconductors, 2021, 42(12) |
0
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2
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The influence of Fe doping on the surface topography of GaN epitaxial material
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Cui Lei;
Yin Haibo;
Jiang Lijuan
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Journal of Semiconductors, 2015, 36(10), 103002-1-103002-4 |
4
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3
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AlGaN/GaN型气敏传感器对于C0的响应研究
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冯春;
王晓亮;
王新华
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半导体学报, 2008, 29(7), 1387-1390 |
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4
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Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlGaN Barrier Layer
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MA ZhiYong;
WANG XiaoLiang;
HU GuoXin
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Chinese Physics Letters, 2007, 24(6), 1705-1708 |
5
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