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Large-scale SiO_2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

Wu Kui ¹ Wei Tongbo ² ^* Lan Ding ³ Zheng Haiyang ² Wang Junxi ² Luo Yi ⁴ Li Jinmin ²

文摘	Wafer-scale SiO_2 photonic crystal (PhC) patterns (SiO_2 air-hole PhC, SiO_2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO_2-hole PhC and SiO_2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO_2 PhC structures are fabricated on ITO current spreading electrode. For SiO_2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.
来源	Chinese Physics. B ,2014,23(2):028504-1-028504-4 【核心库】
关键词	InGaN light-emitting diodes (LEDs) ; photonic crystal ; nanosphere lithography ; FDTD simulation
地址	1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Tsinghua National Laboratory for Information Science and Technology;;State Key Laboratory on Integrated Optoelectronics, Beijing, 100083 2. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 3. Institute of Mechanics, Chinese Academy of Sciences, National Microgravity Laboratory, Beijing, 100190 4. Tsinghua University, Tsinghua National Laboratory for Information Science and Technology;;State Key Laboratory on Integrated Optoelectronics, Beijing, 100084
语种	英文
文献类型	研究性论文
ISSN	1674-1056
学科	物理学
基金	国家973计划
文献收藏号	CSCD:5044725

参考文献共 19 共1页

引证文献 6 篇

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2 Zhao Yun Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst Chinese Physics. B,2014,23(9):096802-1-096802-6
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